The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 06, 1989
Filed:
Dec. 09, 1987
NEC Corporation, Tokyo, JP;
Abstract
For improvement in gate leakage current, there is disclosed a hetero-MIS gate type field effect transistor comprising (a) an indium-phosphide semi-insulating substrate, (b) an indium-phosphide active layer formed on a surface of the semi-insulating substrate, (c) an aluminum-gallium-arsenide layer formed on a surface of the indium-phosphide active layer, (d) a metal gate electrode formed on the aluminum-gallium-arsenide layer, and (e) source and drain electrodes formed on the indium-phosphide active layer and located at the both sides of the metal gate electrode, and the aluminum-gallium-arsenide layer has the highest aluminum atom composition at the upper surface portion contacting the metal gate electrode and the lowest aluminum atom composition at the lower surface portion contacting the indium-phosphide active layer, so that a discontinuity takes place between the indium-phosphide active layer and the aluminum-gallium-arsenide layer and a higher Schottky barrier is provided between the aluminum-gallium-arsenide layer and the gate electrode, thereby preventing the field effect transistor from the large gate leakage current.