The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 06, 1989
Filed:
May. 02, 1988
Applicant:
Inventors:
Anthony Polito, Mesa, AZ (US);
Irenee M Pages, Chandler, AZ (US);
Assignee:
Motorola Inc., Schaumburg, IL (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ; H01L / ; H01L / ;
U.S. Cl.
CPC ...
437198 ; 437194 ; 437195 ; 437197 ; 437247 ;
Abstract
A metallization process for semiconductor devices wherein the metal deposition steps are performed at higher wafer temperatures than subsequent processing steps. The correlation between wafer temperature and maximum grain width is prevalent in many metals used for semiconductor device metallization such as aluminum. Therefore, by measuring and controlling the maximum grain width of the deposited metal during metal deposition steps, it is possible to control and adjust the wafer temperature.