Conductive plug for contacts and vias on integrated circuits

Abstract

A process is disclosed for filling contact or via openings in an integrated circuit with electrically conductive plugs. The process includes the steps of (a) forming one or more openings in an planarized oxide layer, where the one or more openings is disposed over and exposes semi-insulating or conductive regions, and (b) filling the one or more openings with conductive material to substantially the same level as the adjacent surfaces of the oxide layer to form respective planarized conductive plugs. A further aspect of the invention is directed to a process which includes the steps of (a) forming first one or more openings of a first predetermined depth in a planarized oxide layer, the first one or more openings being disposed over the exposing respectively associated semi-insulating or conductive regions; (b) partially filling the first one or more openings with conductive material to a level corresponding to a second predetermined depth; (c) forming second one or more openings of the second predetermined depth in the planarized oxide layer, the second one or more openings being disposed over the exposing respectively associated semi-insulating or conductive regions; and (d) filling the first and second one or more openings to substantially the same level to form respective planarized plugs in the opeinings.