The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 06, 1989
Filed:
Sep. 08, 1987
Applicant:
Inventors:
Kenro Hayashi, Hadano, JP;
Takashi Tanaka, Yamagata, JP;
Assignee:
Toshiba Ceramics Co., Ltd., Tokyo, JP;
Primary Examiner:
Int. Cl.
CPC ...
C04B / ;
U.S. Cl.
CPC ...
264 60 ; 264 62 ; 264 65 ; 264 82 ; 264 86 ; 264344 ;
Abstract
A method of producing a high density and high strength silicon carbide member for a heat treatment furnace to be used in the manufacture of a semiconductor device. In this method, SiC powder, carbon powder, deflocculating agent and water are mixed to form a slip. Then the slip is formed into a desired shape, cured under a nonoxidizing atmosphere, and removed of any impurity contained in the shaped body. Finally, the shaped body is immersed in a molten silicon to convert the carbon in the shaped body into silicon carbide.