The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 30, 1989
Filed:
Mar. 10, 1987
Fujitsu Limited, Kanagawa, JP;
Fujitsu VLSI Limited, Aichi, JP;
Abstract
A semiconductor memory device using a junction short type programmable element comprises an epitaxial layer formed on a semiconductor substrate, the epitaxial layer having an opposite conductive type to that of the semiconductor substrate, the epitaxial layer being a collector region; a base region having the same conductive type as the substrate formed in the epitaxial layer; a first emitter region having an opposite conductive type to that of the base region, formed in the base region; an insulating isolation region, formed in said epitaxial layer and around the base region; a second emitter region having a higher impurity concentration than that of the first emitter region and the same conductive type as the of the first emitter region, formed in the first emitter region in such a manner that the second emitter region penetrate the first emitter region upward and downward and extends to the interior of the base region (14) so that a writing current flows concentratedly at the second emitter region.