The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 30, 1989

Filed:

Feb. 26, 1987
Applicant:
Inventors:

Gerald A Callies, Toledo, OH (US);

Eberhard R Albach, Toledo, OH (US);

John F Conour, Maumee, OH (US);

Richard A Herrington, Walbridge, OH (US);

Assignee:

Libbey-Owens-Ford Co., Toledo, OH (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
C03C / ;
U.S. Cl.
CPC ...
428215 ; 428336 ; 428337 ; 428341 ; 428420 ; 428428 ; 428448 ; 428913 ; 428333 ;
Abstract

A continuous, chemical vapor deposition method for producing a coated glass article is disclosed. A glass substrate is advanced continuously, while hot, past first and second treating stations. A non-oxidizing atmosphere is maintained in the vicinity of the first treating station, while an oxidizing atmosphere is maintained in the vicinity of the second station. A non-oxidizing gas which contains a silane, e.g., SiH.sub.4, is directed from the first treating station against a surface of the glass to form a silicon coating on that surface. An oxidizing gas which includes a metal compound in the vapor phase is directed from the second station against the silicon-coated surface of the article. The process is controlled so that the silane-containing gas forms a reflective silicon coating on the glass surface, the oxidizing gas which includes a metal compound forms a coating of an oxide of the metal, and oxidation before the article reaches the second treating station forms a silicon oxide layer on the silicon which is of sufficient thickness that the metal oxide layer is substantially free of pinholing.


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