The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 23, 1989
Filed:
Jul. 02, 1987
Carl J Scharrer, Plano, TX (US);
Roland H Pang, Plano, TX (US);
Texas Instruments Incorporated, Dallas, TX (US);
Abstract
A fast write CMOS memory cell includes two CMOS inverters connected in a latched configuration with the first CMOS inverter having a P-channel transistor (98) and an N-channel transistor (102) and the second inverter having a P-channel transistor (90) and an N-channel transistor (96). The output of the first inverter is connected to the input of the second inverter with the output of the second inverter connected to the input of the first inverter through a pass transistor (104). The pass transistor (104) is conductive during the static mode of operation and is nonconductive during the write operation. During write, the input of the first inverter is forced to a predetermined logic state with the pass transistor (104) nonconductive. After write, the pass transistor (104) conducts and reconfigures the latch.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile