The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 23, 1989
Filed:
Sep. 27, 1988
Yoshitaka Sasaki, Yokohama, JP;
TDK Corporation, Tokyo, JP;
Abstract
A semiconductor device, i.e. diffusion-self-alignment MOS FET including an n type first semiconductor layer, a p type second semiconductor layer formed in a surface of the first semiconductor layer, an n.sup.+ type third semiconductor layer formed in the second semiconductor layer, a poly-silicon film pattern formed on the first semiconductor layer via a first insulating film, a second insulating film formed on the polysilicon film, and a metal electrode film formed on the second insulating film. A unit pattern of the second and third semiconductor layers and poly-silicon film have two or three enlarged portions and thin elongated portions connecting the enlarged portions to each other, and the metal electrode film is connected to the second and third semconductor layers through openings formed in the second insulating film within the enlarged portions. A number of unit patterns are arranged interdigitally.