The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 23, 1989
Filed:
Feb. 17, 1987
Applicant:
Inventor:
Mitsunori Sugimoto, Tokyo, JP;
Assignee:
NEC Corporation, Tokyo, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ; H01S / ; G02B / ;
U.S. Cl.
CPC ...
357 19 ; 357-4 ; 357 16 ; 357 30 ; 357 17 ; 372 50 ; 350354 ;
Abstract
An improved phototransistor device comprises a collector region and a base region respectively provided on the opposite sides of a multiple quantum well, and an emitter region provided on one side of the base region. A reverse-biased voltage is applied across the multiple quantum well while incident light is input to be absorbed in the multiple quantum well thereby producing photocurrent therein. In the improved phototransistor device, a higher photocurrent level is obtained in accordance with the amplification thereof even if the incident light is very small in its power.