The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 16, 1989
Filed:
Jan. 22, 1987
Jan A Pals, Eindhoven, NL;
Arend J Klinkhamer, Nijmegen, NL;
U.S. Philips Corp., New York, NY (US);
Abstract
Method of manufacturing a semiconductor device and semiconductor device manufactured by the use of such a method. The invention describes a method of contacting narrow regions, such as narrow polysilicon gates of a CCD having a width of, for example, 4 .mu.m. Poly 2 and poly 3 layers, which are required already for the other CCD phases, are used as etching masks having two contact openings of 4 .mu.m which are displaced both with respect to each other and with respect to the region to be contacted, so that it is possible to define a contact opening which is smaller than 4 .mu.m and is aligned accurately above the gate to be contacted. FIG. 4.