The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 16, 1989
Filed:
Jun. 07, 1988
Tadao Suzuki, Hitachi, JP;
Mitsukuni Tsutsui, Ibaraki, JP;
Hitachi, Ltd., Tokyo, JP;
Abstract
The air flow rate detecting resistance element 1A or the temperature sensing resistance element 1B comprises a dielectric substrate 5A or 5B, a thin film type conductor 6A or 6B as a resistance element forming conductor, and a thin film type conductor 7A or 7B as a shield electrode element forming conductor. The resistance element conductor 6A or 6B and the shield electrode element conductor 7or 7B are formed by evaporation on the dielectric substrate 5A or 5B. The shield electrode element conductor 7A or 7B is provided in the vicinity of the resistance element conductor 6A or 6B an electrostatic capacity is formed therebetween. The shield electrode element conductor 7A or 7B is maintained at the lowest potential such as ground or a common potential. The guidance of high frequency radio waves to the resistance element 1A or 1B can be effectively prevented, so that the radio interference resistance of the hot film type air flow meter can be improved.