The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 09, 1989
Filed:
Nov. 16, 1987
Kazuhiko Sagara, Tokyo, JP;
Tohru Nakamura, Tokyo, JP;
Kazuo Nakazato, Tokyo, JP;
Tokuo Kure, Tokyo, JP;
Kiyoji Ikeda, Tokyo, JP;
Noriyuki Homma, Tokyo, JP;
Hitachi, Ltd., Tokyo, JP;
Abstract
A semiconductor device wherein a layer doped with impurities is provided between a buried layer and an epitaxial layer, said layer doped with impurities having a conductivity of the type opposite to that of said buried layer and said epitaxial layer, a reversely biasing voltage is applied across the buried layer and the layer doped with impurities, and side surfaces of the epitaxial layer are surrounded by an insulator. This helps effectively prevent the element formed in the epitaxial layer from being affected by .alpha.-particles and greatly improve reliability of the semiconductor device.