The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 09, 1989

Filed:

Oct. 23, 1987
Applicant:
Inventors:

Timothy J Drummond, Tijeras, NM (US);

David S Ginley, Albuquerque, NM (US);

Thomas E Zipperian, Albuquerque, NM (US);

Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
437 81 ; 148D / ; 148D / ; 148D / ; 148D / ; 148 333 ; 156612 ; 156D / ; 428627 ; 437107 ; 437 95 ; 437180 ; 437245 ; 437247 ; 437902 ; 437925 ;
Abstract

During the growth of compound semiconductors by epitaxial processes, substrates are typically mounted to a support. In modular beam epitaxy, mounting is done using indium as a solder. This method has two drawbacks: the indium reacts with the substrate, and it is difficult to uniformly wet the back of a large diameter substrate. Both of these problems have been successfully overcome by sputter coating the back of the substrate with a thin layer of tungsten carbide or tungsten carbide and gold. In addition to being compatible with the growth of high quality semiconductor epilayers this coating is also inert in all standard substrate cleaning etchants used for compound semiconductors, and provides uniform distribution of energy in radiant heating.


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