The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 09, 1989
Filed:
Oct. 19, 1987
Gerold W Neudeck, West Lafayette, IN (US);
Purdue Research Foundation, West Lafayette, IN (US);
Abstract
Silicon epitaxial lateral overgrowth (ELO) techniques are employed to fabricate bipolar transistors. ELO bipolar devices have may advantages in reducing parasitic values. Because the heavily doped buried layer (or sub-collector) is eliminated in ELO structures, C.sub.cs is greatly reduced. The concentric collector contact and its closeness to the active collector region reduce r.sub.c in the device. The parasitic collector-to-base capacitance, C.sub.cb, is also reduced due to oxide-isolation. The ELO device is fabricated using standard silicon-processing equipment. ELO can be accomplished on <100> or <111> silicon substrates.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile