The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 02, 1989

Filed:

Oct. 30, 1987
Applicant:
Inventors:

Brian H Desilets, Wappingers Falls, NY (US);

Richard D Kaplan, Wappingers Falls, NY (US);

Harbans S Sachdev, Wappingers Falls, NY (US);

Krishna G Sachdev, Wappingers Falls, NY (US);

Susan A Sanchez, Glenham, NY (US);

Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
B05D / ;
U.S. Cl.
CPC ...
156643 ; 1566591 ; 156660 ; 156646 ; 156662 ; 156668 ; 1566611 ; 156904 ; 430314 ; 430313 ; 437245 ; 437229 ; 427 41 ;
Abstract

A method of image transfer transfer into a substrate by reactive ion etch technique is provided. A mask layer on said substrate is formed by a spin-on film which film is comprised of a mixed organo-functional zircoaluminate or zircotitanate material. The film is dried and cured, and thereafter coated with a radiation sensitive resist. The reist is imagewise exposed and developed, which developing preferably also removes the pattern in the mask exposing the substrate. The substrate is then reactive ion etched, the remaining film acting as a barrier material to the etching.


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