The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 02, 1989
Filed:
Jul. 30, 1987
Uzi Efron, Los Angeles, CA (US);
Paul O Braatz, Canoga Park, CA (US);
Prahalad K Vasudev, Thousand Oaks, CA (US);
Glenn D Robertson, Malibu, CA (US);
Hughes Aircraft Company, Los Angeles, CA (US);
Abstract
An LCLV is formed with a sapphire substrate base, a highly doped, thin silicon epitaxial layer forming an ohmic back contact on a smooth surface of the sapphire substrate, and a lightly doped, high resistivity silicon epitaxial layer in the range of about 20-60 microns thick on the back contact. The use of a sapphire substrate provides a better surface quality and higher resolution than previously available with the semiconductor substrates. Lattice defects in the thin back contact are reduced by the formation of a buried amorphous layer adjacent the sapphire substrate, and subsequent recrystallization thereof using the unamorphized portions of the back contact as recrystallization seeds. The application of the invention to both MOS and Schottky diode LCLVs is discussed.