The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 25, 1989
Filed:
Oct. 21, 1982
Applicant:
Inventors:
Kazuo Nakazato, Kokubunji, JP;
Tohru Nakamura, Houya, JP;
Masatoshi Matsuda, Fuchu, JP;
Takao Miyazaki, Hachioji, JP;
Tokuo Kure, Kokubunji, JP;
Takahiro Okabe, Nishitama, JP;
Minoru Nagata, Kodaira, JP;
Assignee:
Hitachi, Ltd., Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ; H01L / ; H01L / ;
U.S. Cl.
CPC ...
357 59 ; 357 34 ; 357 54 ; 357 67 ; 357 71 ;
Abstract
A semiconductor device wherein the active regions of a transistor are formed in an opening provided in an insulating film, electrodes are led out by a polycrystalline silicon film formed on the insulating film, and the upper surfaces of the emitter and base electrodes and the exposed surface of the insulating film are substantially even.