The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 18, 1989
Filed:
Feb. 13, 1987
Mitsunori Sugimoto, Tokyo, JP;
NEC Corporation, Tokyo, JP;
Abstract
An improved semiconductor laser comprises an active region of quantum well, at least two cladding layers positioned at both sides of said active region, and two electrodes provided separately at one side of at least one cladding layer of said at least two cladding layers so that a laser oscillation is produced in a wide wavelength range and high response rate for the reason why the wavelength of a laser oscillation can be changed in wavelengths in the vicinity of transition energy E.sub.ke-HH between n=k electron quantum and n=k heavy hole quantum level (k=1, 2, 3 - - - ) in accordance with the control of current to be injected from one electrode of said two electrodes or voltage to be applied to said one electrode.