The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 18, 1989
Filed:
May. 27, 1987
Applicant:
Inventor:
Gabriella Fontana, Vimercate, IT;
Assignee:
SGS Microelettronica S.p.A., Catania, IT;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
357 235 ; 365185 ;
Abstract
Disclosed is an electrically alterable, floating gate type, nonvolatile, semiconductor memory device wherein the gate oxide layer in the 'injection' area between the silicon (drain region of the device) and the floating gate has an increased thickness with respect to the thickness of the same gate oxide layer over the channel region of the device in order to decrease the parasitic capacitance of the injection area, thus improving the programming threshold voltage characteristics. A method for fabricating the improved memory device is also disclosed.