The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 11, 1989
Filed:
Apr. 17, 1986
Applicant:
Inventor:
Raymond A Heald, Los Altos, CA (US);
Assignee:
Fairchild Semiconductor Corporation, Santa Clara, CA (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G11C / ; G11C / ; H01L / ;
U.S. Cl.
CPC ...
365177 ; 365154 ; 357 43 ;
Abstract
A translinear static memory cell employs both bipolar and metal-oxide-semiconductor technologies. Bipolar transistors are employed as switching devices, whereas MOS transistors provide power supply and coupling functions. Among other advantages, the bipolar transistors provide large changes in output current for small changes in input voltage, thereby enabling high level read signals to be obtained. The MOS load and coupling transistors facilitate bidirectional current flow into and out of the cell, thereby enabling write operations to be achieved during relatively short periods of time.