The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 11, 1989

Filed:

Apr. 10, 1987
Applicant:
Inventors:

J Everett Modisette, San Antonio, TX (US);

R Barry Johnson, Huntsville, AL (US);

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G21G / ; G01J / ;
U.S. Cl.
CPC ...
2505 / ; 2504931 ;
Abstract

A dynamic infrared simulation cell comprising a photoconductive layer, a first conductive layer, a second conductive layer, and an external energy source. The first conductive layer is affixed about one side of the photoconductive layer and is transmissive with respect to radiation of known energy. The second conductive layer is affixed about the other side of the photoconductive layer. The external energy source connects to the first conductive layer and the second conductive layer. The photoconductive layer is a plurality of segments of photoconductive silicon material. A dielectric material fills the areas between the segments of photoconductive material. The first conductive layer is a transparent layer of gold material. The second conductive layer is a layer of aluminum material. An enclosure is available for maintaining the cell in a darkened environment.


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