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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 4819057 B1

PDFFull Text
Date of Patent:
Apr. 04, 1989

Filed:

Sep. 25, 1986

Semiconductor light-emitting element

Applicant:
Inventors:

Katsuyuki Naito, Tokyo, JP;

Masayoshi Okamoto, Kawasaki, JP;

Koichi Mizushima, Kamakura, JP;

Toshio Nakayama, Fujisawa, JP;

Masami Sugiuchi, Yokohama, JP;

Akira Miura, Toride, JP;

Assignee:

Kabushiki Kaisha Toshiba, Kawasaki, JP;

Attorney:

Oblon, Fisher, Spivak, McClelland & Maier

Primary Examiner:

Robert S Macon

Int. Cl.
CPC ...
H01L / ; H01L / ;
U.S. Cl.
CPC ...
357 17 ; 357 2315 ; 357 72 ; 264298 ;
Abstract

A semiconductor light-emitting element of a metal/organic film/semiconductor junction structure has a semiconductor layer, and an organic Langmuir-Blodgett thin film formed on the semiconductor layer. The thin film includes an electron donative organic monomolecular compound whose longest absorption peak wavelength in an electron transition spectrum falls within a range of 300 nm to 600 nm. A layer of metallic material is formed on the thin film.

Find Patent Forward Citations

Naito, Katsuyuki. (1989). Semiconductor light-emitting element (U.S. Patent No. 4819057). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/4819057

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