The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 04, 1989
Filed:
May. 02, 1988
Kazuo Nakazato, Hachioji, JP;
Tohru Nakamura, Houya, JP;
Takao Miyazaki, Hachioji, JP;
Nobuyoshi Natsuaki, Higashiyamato, JP;
Masahiko Ogirima, Tokyo, JP;
Minoru Nagata, Kodaira, JP;
Hitachi, Ltd., Tokyo, JP;
Abstract
The invention deals with a semiconductor device which comprises a semiconductor substrate of a first conductivity type, a semiconductor region formed on said substrate, and a first insulation film provided between said semiconductor region and said semiconductor substrate, wherein said semiconductor substrate is isolated by said insulation film from a polycrystalline silicon layer formed in the periphery of said semiconductor region thereby to reduce the parasitic capacitance, and wherein said insulation film is stretched and arranged on the lower side of said semiconductor region.