The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 04, 1989
Filed:
Jul. 17, 1987
Ranjit S Mand, Nepean, CA;
Masaru Nakamura, Kawaguchi, JP;
Kabushiki Kaisha Toshiba, Kawasaki, JP;
Abstract
An optoelectronic bistable apparatus having a double heterojunction structure comprising a light-emitting first semiconductor layer of n type GaAs interlaid between a second semiconductor layer of n.sup.- type AlGaAs and a third semiconductor layer of p.sup.+ type AlGaAs, the second and third semiconductor layers having a broader energy gap than that of the first semiconductor layer. An extremely thin fourth semiconductor layer of p.sup.+ type GaAs with a high impurity concentration is deposited on the second semiconductor layer. A fifth semiconductor layer of n.sup.- type AlGaAs, n.sup.+ type AlGaAs and n.sup.+ type GaAs is formed on the fourth semiconductor layer. At least a portion of the fifth semiconductor layer which contacts the fourth semiconductor layer has a broader energy gap than that of the second semiconductor layer.