The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 04, 1989
Filed:
Oct. 20, 1987
Applicant:
Inventor:
Anatoly Feygenson, Exeter Township, Berks County, PA (US);
Assignee:
American Telephone and Telegraph Company, AT&T Bell Laboratories, Murray Hill, NJ (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ; H01L / ;
U.S. Cl.
CPC ...
437 31 ; 437 33 ; 437 90 ; 148D / ; 148D / ; 357 34 ;
Abstract
Submicron resolution in the fabrication of transistors is obtained by using sidewall techniques. The techniques described remove the sidewalls after oxidizing the materials between the sidewalls and the openings so formed by the removal are used as a mask for subsequent substrate modification by either diffusion or ion implantation.
Feygenson, Anatoly. (1989). Techniques useful in fabricating semiconductor devices having submicron (U.S. Patent No. 4818713). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/4818713
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile