The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 28, 1989

Filed:

May. 08, 1987
Applicant:
Inventors:

Mamoru Yoshida, Tokyo, JP;

Tsutomu Nomoto, Tokyo, JP;

Tomoo Araki, Tokyo, JP;

Tsukasa Watanabe, Tokyo, JP;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
357 237 ; 357 17 ; 357 45 ; 350335 ; 350336 ; 3503 / ; 350342 ;
Abstract

A thin-film transistor matrix comprises thin-film transistors formed on a dielectric substrate and arranged in rows and columns. Each of the transistors comprises a control electrode, an insulation film formed on the control electrode, a semiconductor film formed on the insulation film, a first main electrode formed on the semiconductor film, and a second main electrode formed on the semiconductor film. Row interconnection layers are provided for the respective rows to interconnect the control electrodes of the transistors of the respective rows. Column interconnection layers are provided for the respective columns to interconnect the first main electrodes in the respective columns. The insulation film and the semiconductor film are formed in the regions where the transistor is formed and in the regions where the column interconnection layer is formed.


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