The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 21, 1989
Filed:
Nov. 03, 1983
Kazuhiro Toyoda, Yokohama, JP;
Chikai Ono, Kawasaki, JP;
Fujitsu Limited, Kawasaki, JP;
Abstract
A bipolar type static memory cell comprising two cross connected circuits, each of the circuits including a transistor and a load element is disclosed. An N-type epitaxial layer, grown on an N.sup.+ -type buried layer, is used as a collector region of the transistor, and a P-type layer formed in the N-type epitaxial layer and an N.sup.+ -type layer formed in the P-type layer are used as a base region and an emitter region of the transistor. A P-type diffusion layer is formed in the N-type epitaxial layer from the surface of the epitaxial layer to reach and contact the buried layer. The structure results in the memory cell parasitic diodes being effectively eliminated from the cell together with the unwanted charge storage effects of the diodes.