The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 21, 1989
Filed:
Apr. 28, 1988
Applicant:
Inventors:
Jonathan K Abrokwah, Rosemount, MN (US);
Nicholas C Cirillo, Jr, Minneapolis, MN (US);
Michael S Shur, Golden Valley, MN (US);
Obert N Tufte, Prior Lake, MN (US);
Assignee:
Honeywell Inc., Minneapolis, MN (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
357 42 ; 357 16 ; 357 22 ;
Abstract
A complementary (Al,Ga)As/GaAs heterostructure insulated gate field-effect transistor (HIGFET) approach is described in which both the n-channel and p-channel transistors utilize a two-dimensional electron (hole) gas in undoped high mobility channels to form planar, complementary GaAs-based integrated circuits.