The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 21, 1989
Filed:
Aug. 17, 1987
Applicant:
Inventor:
Satwinder D Malhi, Garland, TX (US);
Assignee:
Texas Instruments Incorporated, Dallas, TX (US);
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ; H01L / ;
U.S. Cl.
CPC ...
357 42 ; 357 59 ; 357 239 ;
Abstract
A stacked CMOS structure is disclosed which uses buried N++ source and drain for the non-self-aligned bulk N-channel driver devices together with an oversized polygate on which a non-self aligned P-channel load device is made from a second layer of poly or recrystallized poly. The non-self aligned pair of stacked devices provides increased density of devices per unit area with a simple process at the cost of increased gate to source and gate to drain parasitic capacitances.