The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 21, 1989

Filed:

Jun. 10, 1987
Applicant:
Inventors:

Masao Kosugi, Yokohama, JP;

Akiyoshi Suzuki, Tokyo, JP;

Hideki Ina, Kawasaki, JP;

Kazuhito Outsuka, Tokyo, JP;

Shigeki Ogawa, Yokohama, JP;

Masao Totsuka, Ohmiya, JP;

Fumio Sakai, Yokohama, JP;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G03B / ; G03B / ;
U.S. Cl.
CPC ...
355 43 ; 355 53 ;
Abstract

A projection exposure apparatus for projecting a pattern of a reticle upon a wafer by use of a projection lens system, is disclosed. The apparatus is arranged so that a mark illuminating light is projected upon the wafer from between the projection lens system and the wafer and not by way of the projection lens system. The light diffracted by an edge of a wafer alignment mark is photoelectrically detected by way of the projection lens system, whereby an electrical signal corresponding to an image of the alignment mark is obtained. On the basis of the detected signal, the wafer is aligned with the reticle. This arrangement allows detection of the alignment mark without being affected by a photoresist applied to the wafer surface. Thus, the reticle-to-wafer alignment can be made accurately. Also, a novel and unique alignment method is disclosed. The disclosed method assures high-accuracy reticle-to-wafer alignment.


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