The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 21, 1989
Filed:
Jul. 30, 1987
Gary A West, Dover, NJ (US);
Karl W Beeson, Princeton, NJ (US);
Allied-Signal Inc., Morris Township, Morris County, NJ (US);
Abstract
This invention relates to an improved method of depositing cobalt silicide films on a substrate by chemical vapor deposition at a temperature range of about 100.degree.-400.degree. C. By employing two separate precursors of, preferably, for cobalt, comprised of cobalt carbonyls having a vapor pressure sufficiently high to provide a cobalt stream to support chemical vapor deposition, and for silicon, comprised of silanes or halogenated silanes having a vapor pressure sufficient to support chemical vapor deposition, a cobalt silicide film is grown. The ratio of silicon to cobalt is controlled precisely by varying the substrate temperature while the process is being conducted. In a more specific aspect, the films are grown on substrates of either gallium arsenide or silicon. In the case of silicon, epitaxial growth of the cobalt silicide film is achieved by specific control of process parameters.