The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 14, 1989
Filed:
Dec. 29, 1986
Takao Okada, Hachioji, JP;
Masamichi Morimoto, Fuchu, JP;
Olympus Optical Co., Ltd., Tokyo, JP;
Abstract
A three-dimensional tunnel memory device includes a multilayer Langmuir-Blodgett film wherein each layer can store or carry an electric charge. Charges are introduced into one side of the film in a time sequence corresponding to the information to be carried. An electric field is applied between the faces of the film to cause the charge stored by any layer to be transferred to the adjacent layer, and for thus reading out the sequence of charges stored by the film. The multilayer Langmuir-Blodgett film includes memory unit cells each comprising Langmuir-Blodgett films formed, respectively, of different kinds of organic compounds and contacting each other. Electric fields of different magnitudes are applied, respectively, to the film constituting each memory unit cell thereby allowing the stored charge in each film constituting the memory unit cell to hop the tunnel barrier.