The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 14, 1989
Filed:
Sep. 16, 1986
Masakazu Kakumu, Yokohama, JP;
Kabushiki Kaisha Toshiba, Kawasaki, JP;
Abstract
A semiconductor device comprises a semiconductor substrate of a first conductivity type, a first impurity region of second conductivity which is formed in the substrate, a second impurity region of the second conductivity type which is formed in the substrate and spaced apart from the first semiconductor region, a channel region located between the first and second impurity regions, an insulation layer on the channel region, and a gate electrode on the insulation layer including conductive layer means for decreasing the temperature dependence of the semiconductor device, the layer means including a conductive layer and a semiconductive layer for reducing energy level degeneration.