The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 14, 1989
Filed:
Jul. 30, 1987
Applicant:
Inventor:
Tadashi Hirao, Itami, JP;
Assignee:
Mitsubishi Denki Kabushiki Kaisha, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ;
U.S. Cl.
CPC ...
437 31 ; 357 34 ; 357 91 ; 437 32 ; 437 33 ; 437200 ;
Abstract
A semiconductor integrated circuit device including a bipolar transistor having a semiconductor layer than will become a collector region, a base region provided at the surface of the semiconductor layer, and an emitter region provided at the surface of the base region. The device comprises: a first silicon film for connecting an external base layer and a base electrode of the transistor, and a first silicide film that is produced on the surface of the first silicon film; and a second silicon film for connecting an emitter layer and an emitter electrode of the transistor and a second silicide film that is produced on the surface of the second silicon film.