The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 07, 1989
Filed:
Feb. 22, 1988
Hiroaki Kakinuma, Tokyo, JP;
Yukio Kasuya, Tokyo, JP;
Masaaki Sakamoto, Tokyo, JP;
Tsukasa Watanabe, Tokyo, JP;
Oki Electric Industry Co., Ltd., Tokyo, JP;
Abstract
A photoelectric conversion device comprises a photodiode comprising a metallic electrode formed of a metal capable of forming a Schottky junction together with amorphous silicon, such as Cr or Ni, a transparent electrode formed of ITO or the like, and an i-type hydrogenated amorphous silicon layer sandwiched in between the metallic electrode and the transparent electrode. A bias voltage is applied across the metallic electrode and the transparent electrode so that the metallic electrode is biased to a negative potential relative to the transparent electrode. A Schottky barrier formed in the interface between the metallic electrode and the i-type hydrogenated amorphous silicon layer is used as an electron blocking layer. Thus, the dark current is suppressed on a low level and the photoelectric conversion device is able to operate at a high S/N ratio.