The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 07, 1989
Filed:
Apr. 22, 1988
Applicant:
Inventors:
Ashwin H Shah, Dallas, TX (US);
Pallab K Chatterjee, Richardson, TX (US);
Assignee:
Texas Instruments Inc., Dallas, TX (US);
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H03K / ; H03K / ; H01L / ;
U.S. Cl.
CPC ...
307448 ; 307451 ; 307445 ; 307304 ; 307450 ; 357 42 ; 357 234 ;
Abstract
One embodiment of the present invention includes a vertical inverter. A layer of P-type material is formed on the surface of an N+-type substrate, followed by formation of an N+ layer, a P+ layer, an N- layer, and a P+ layer. (Of course different doping configurations may be used and remain within the scope of the invention.) A trench is then etched along one side of the stack thus formed and a connector is formed to the middle P+ and N- layers. Another trench is then formed where a gate insulator and a- gate are formed. The gate serves as the gate for both the N-channel and P-channel transistors thus formed.