The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 07, 1989

Filed:

Nov. 30, 1987
Applicant:
Inventors:

Naoyuki Tamura, Kudamatsu, JP;

Hideaki Kamohara, Ibaraki, JP;

Norio Kanai, Kudamatsu, JP;

Kazuaki Ichihashi, Kudamatsu, JP;

Assignee:

Hitachi, Ltd., Tokyo, JP;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
C30B / ;
U.S. Cl.
CPC ...
422247 ; 118500 ; 118719 ; 118730 ;
Abstract

In a molecular beam epitaxy apparatus in accordance with the present invention, transfer means for transferring substrates, which have been transferred from an introduction chamber, to a growth chamber and for transferring the substrates after the growth of a film, which have been transferred from the growth chamber, to a discharge chamber consists of a rotary disc which supports thereon a plurality of substrates and transfers them to the growth chamber and then to the discharge chamber, and all of the introduction chamber, the growth chamber and the discharge chamber are disposed at predetermined positions, respectively, so that the molecular beam crystal growth can be effected in a clean room which is separated from a maintenance room.


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