The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 28, 1989
Filed:
May. 29, 1987
Applicant:
Inventors:
Katsuhiko Goto, Itami, JP;
Hirofumi Namizaki, Itami, JP;
Assignee:
Mitsubishi Denki Kabushiki Kaisha, Tokyo, JP;
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01S / ;
U.S. Cl.
CPC ...
372 46 ; 372 44 ; 372 45 ;
Abstract
A semiconductor laser device comprises a semi-insulating substrate and at least two kinds of the thin compound semiconductor layers having different width of band gap, which are alternately superimposed on the seim-insulating substrate to form a multiquantum well layer, wherein disordered regions are formed in the multiquantum well layer except for a stripe region having a narrow width at its intermediate portion by selectively diffusing two kinds of impurities having different conductive properties from both sides of the multiquantum well layer until the impurities reach the semi-insulating substrate.