The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 28, 1989

Filed:

Mar. 04, 1987
Applicant:
Inventors:

David Welch, San Jose, CA (US);

Donald R Scifres, San Jose, CA (US);

Peter Cross, Palo Alto, CA (US);

William Streifer, Palo Alto, CA (US);

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01S / ;
U.S. Cl.
CPC ...
372 46 ; 372 45 ; 372 50 ;
Abstract

A semiconductor laser array having a plurality of waveguides at least some of which are directly joined at Y-junctions. The region near the Y-junctions provides a phase boundary condition in which lightwaves propagating in adjacent waveguides are in phase. A combination of strong and weak waveguiding is provided, with strong waveguides that eliminate evanescent coupling from occuring at least in the Y-junction regions, and with weak guides near one or both end facets permitting evanescent coupling. The evanescent coupling between adjacent weak waveguides preserves the in phase relationship that was established in the Y-junction regions, resulting in a diffraction limited single lobe far field output. Alternatively, even without evanescent coupling, the modes can adjust their phases in the weak waveguides, where the propagation constant is less tightly specified by the geometry.


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