The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 28, 1989

Filed:

Sep. 30, 1985
Applicant:
Inventor:

Hamza Yilmaz, Dewitt, NY (US);

Assignee:

General Electric Company, Fairfield, CT (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ;
U.S. Cl.
CPC ...
357 234 ; 357 238 ; 357 2314 ; 357 86 ;
Abstract

An insulated gate device includes at least one cell having base and emitter region surfaces disposed in ohmic contact with a metallic emitter electrode. The cell is constructed to provide a larger ratio of base region surface area to emitter region surface area in contact with the emitter electrode than is found in the prior art. The cell is further constructed to provide paths for reverse current flow from a drift region through the base region and to the emitter electrode; these paths being spaced form the cell's emitter-base junction.


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