Dielectric inks for multilayer copper circuits

Abstract

An improved dielectric ink for the fabrication of multilayer, integrated circuits is disclosed. The subject inks comprise a devitrifying zinc-magnesium-barium-aluminum-zirconium-phosphosilicate glass frit, a devitrifying zinc-magnesium-barium-aluminum-silicate glass frit, or a devitrifying zinc-magnesium-strotium-aluminum-silicate glass frit, an organic vehicle and, optionally, a suitable ceramic filler material. The subject glass frit containing a suitable ceramic filler can be fabricated into stand-alone substrates useful in a wide variety of electronic applications. The glass frit of the subject inks has a high softening temperature which facilitates complete removal of carbonaceous residues of the vehicle from the dried ink during firing. This is advantageous in that it eliminates the need to incorporate oxygen-generating additives, such as barium nitrate, in the ink or treatment of the ink in an oxidizing or reducing plasma prior to firing. The disclosed inks are particularly advantageous in the fabrication of multilayer integrated circuits based on copper conductors.