The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 21, 1989
Filed:
Sep. 14, 1987
Mau-Chung F Chang, Thousand Oaks, CA (US);
Peter M Asbeck, Newbury Park, CA (US);
Keh-Chung Wang, Thousand Oaks, CA (US);
David L Miller, Thousand Oaks, CA (US);
Rockwell International Corporation, El Segundo, CA (US);
Abstract
A heterostructure complementary transistor switch (HCTS) is fabricated using epitaxial layers on a substrate to form the desired P-N-P-N (or N-P-N-P) complementary structure in III-V compound semiconductor materials. Two HCTS are formed on a single substrate to form a memory cell. A collector and a base on one of the HCTs are connected to a base and a collector, respectively, on the other HCTS to form the memory cell.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile