The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 21, 1989

Filed:

Jan. 16, 1986
Applicant:
Inventors:

Sebastian R Borrello, Dallas, TX (US);

Charles G Roberts, McKinney, TX (US);

Assignee:
Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ;
U.S. Cl.
CPC ...
357 30 ; 357 24 ;
Abstract

A method and an apparatus which permits use of a metal-insulator-semiconductor device as an infrared detector. A single layer of metal is provided having an extremely thin portion through which infrared radiation can pass and a thick portion through which infrared radiation cannot pass. Both of these portions together form the MIS (metal-insulator-semiconductor) gate. A voltage is applied to the metal which creates a potential well within the semiconductor substrate below. When the device is exposed to infrared radiation the radiation, causes photons to pass through the thin portion of the MIS gate and generates a charge within the potential well. The thick portion of the MIS gate shields the semiconductor substrate from photons so that no charges are generated in the potential well which is located below this portion of the metal layer. This provides a charge storage region so that the charge which is generated under the thin gate can be stored in the entire potential well created by the gate as a whole. This results in an MIS device having a detector cell which can be several times larger than photon sensitive dimensions. In effect, each detector element can have a storage capacity of a gate biased to ten volts or more. A three design is also disclosed which has the detection region separated from the storage region.


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