The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 21, 1989
Filed:
Apr. 25, 1988
Applicant:
Inventor:
Sergey Luryi, Millington, NJ (US);
Assignee:
American Telephone and Telegraph Company, AT&T Bell Laboratories, Murray Hill, NJ (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ; H01L / ;
U.S. Cl.
CPC ...
357 16 ; 357 52 ; 357 55 ; 357 56 ; 357 88 ; 156610 ; 156603 ; 156D / ; 437 84 ; 437131 ;
Abstract
Dislocation-free epitaxial layers on the surfaces of lattice mismatched single crystal substrates, such as germanium or gallium arsenide on silicon, can be grown provided the surfaces are suitably patterned, such as castellated or porous.