The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 21, 1989
Filed:
Sep. 21, 1987
Akira Usui, Osaka, JP;
Seiji Sakashita, Kyoto, JP;
Kiyotake Fukui, Osaka, JP;
Hiroyuki Nagai, Osaka, JP;
Abstract
A high frequency amplifier circuit based on an amplifying transistor, e.g. a dual-gate FET, having an A.G.C. voltage applied to a control terminal thereof to control the transistor DC operating current, has a diode connected between an input electrode of the transistor and a source of an input high frequency signal. All or part of the DC operating current of the transistor is passed through the diode as the operating current of the diode to thereby produce a high degree of attenuation by the diode when the transistor current level is small, so that reduced cross modulation interference is produced by the transistor when a high degree of gain reduction is executed by A.G.C. control.