The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 21, 1989
Filed:
Mar. 23, 1988
Dieter Frank, Naperville, IL (US);
Lincoln D Metcalfe, LaGrange, IL (US);
John Y Park, Naperville, IL (US);
Akzo America Inc., New York, NY (US);
Abstract
The invention is a process for the removal of impurities comprising phenolics, dextrans or amino nitrogen from an aqueous saccharide solution. The solution is contacted with a sorbent, which itself is also an embodiment of the invention, comprising a cationic nitrogenous surfactant, the molecules of which contain at least one alkyl group of at least 8 carbon atoms, deposited on the surface of a microporous hydrophobic polymeric support. The deposition is accomplished by contacting a solution of the surfactant in an appropriate solvent with the support. The impurities are adsorbed onto the sorbent and the aqueous saccharide solution is removed from contact wiht the sorbent. The solvent must be completely miscible with the saccharide solution and the solution of the surfactant in the solvent must have a maximum sorbent wetting rate of at least 100 g/m.sup.2 .multidot.min., and a sorbent bed retention of at least 140%, based on the bed interstitial volume. The partitioning coefficient of the impurities in the surfactant asnd solvent deposited on the support, as compared to in water, must be at least 20. The process is extremely effective in removing impurities from saccharide solution shaving very high concentrations of impurities, and at very high flow rates.