The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 21, 1989
Filed:
Sep. 11, 1987
Applicant:
Inventors:
Assignee:
BBC Brown Boveri AG, Baden, CH;
Primary Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ; H01L / ; H01L / ;
U.S. Cl.
CPC ...
437006 ; 437 17 ; 437 24 ; 437142 ;
Abstract
A method for producing large-area power semiconductor components, wherein at least two irradiation processes (neutron irridiation, ion implantation electron, .gamma.or proton irradiation) are used to produce the basic doping, to introduce deep pn junctions and to introduce recombination centers. It is precisely for the critical process steps (p-base, n-type stop layer) that the improved homogeneity of the layers signifies a higher yield and improved limit data for the finished components.