The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 14, 1989
Filed:
Jun. 22, 1987
Applicant:
Inventors:
Kenji Yao, Yokosuka, JP;
Teruyoshi Mihara, Yokosuka, JP;
Assignee:
Nissan Motor Co., Ltd., Yokohama, JP;
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ;
U.S. Cl.
CPC ...
357 42 ; 357 59 ; 357 47 ; 357 48 ;
Abstract
A semiconductor device such as a CMOS is provided with highly doped polycrystalline silicon regions for preventing undesired operations of parasitic transistors. Each polycrystalline region is extended deeper from a top surface of the silicon chip than source and drain regions of MOS transistors. In a substrate region of each MOS, one polycrystalline region of the same conductivity type as the substrate region is formed near the source region, and connected with said source region so that the polycrystalline region is held equipotential with the source region.