The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 14, 1989
Filed:
Dec. 11, 1986
Luciano Gandolfi, Corsico, IT;
Salvatore Musumeci, Riposto, IT;
SGS Microelettronica SpA, Agrate Brianza, IT;
Abstract
A semiconductor device with a planar junction and self-passivating termination includes: a silicon substrate of one type of conductivity; an epitaxial layer of a second type of conductivity which is opposite to the first type of conductivity, lying on the substrate, so as to form with it a planar PN junction; a first region, of the first type of conductivity, that delimits, in its interior, an active portion of the device and extends transversely, from the surface of the epitaxial layer to the substrate with a portion having a high concentration of impurities and, on the surface, in the epitaxial layer, with a portion having a low concentration of impurities; and another region immersed in the epitaxial layer and of the same type of conductivity, but with a higher concentration of impurities. The latter region and the top portion of the first region extend toward each other with progressively decreasing concentrations of impurities. The first region may consist of a thin surface zone diffused on the walls and on the bottom of a deep groove of the type normally made in mesa devices. However, unlike mesa devices of the prior art the device according to the present invention does not require a thick layer of dielectric material in contact with the junction and its electrical properties are therefore improved and more reliable.