The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 14, 1989
Filed:
Feb. 18, 1988
Applicant:
Inventors:
Thomas W Macelwee, Ottawa, CA;
Iain D Calder, Kanata, CA;
Assignee:
Northern Telecom Limited, Montreal, CA;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ; F27D / ; C21D / ;
U.S. Cl.
CPC ...
437 24 ; 437 25 ; 437 26 ; 437247 ; 148 333 ; 373111 ; 432261 ;
Abstract
A silicon-on-insulator substrate having a very low threading dislocation density is made by implanting oxygen ions into a silicon substrate while heating the substrate to form a layer of silicon dioxide buried in the silicon substrate and annealing the implanted substrate at high temperature in a novel furnace incorporating a polysilicon tube to constrain the annealing temperature to be uniform over the entire substrate. The silicon-on-insulator substrate is particularly useful for the manufacture of semiconductor devices formed in thin silicon films.